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www.irf.com 1 3/31/04 irf6608 hexfet power mosfet notes through are on page 2 directfet isometric applicable directfet outline and substrate outline (see p.7, 8 for details) sq sx st mq mx mt application specific mosfets ideal for cpu core dc-dc converters low conduction losses low switching losses low profile (<0.7 mm) dual sided cooling compatible compatible with existing surface mount techniques description the irf6608 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a micro-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors operating at higher frequencies. the irf6608 has been optimized for parameters that are critical in synchronous buck converters including rds(on), gate charge and cdv/dt-induced turn on immunity. the irf6608 has been optimized for parameters that are critical in synchronous buck converters including rds(on) and gate charge to minimize losses in the control fet socke t. v dss r ds(on) max qg 30v 9.0m ? @v gs = 10v 16nc 11m ? @v gs = 4.5v absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation w p d @t c = 25c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 58 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.0 r j-pcb junction-to-pcb mounted 1.0 ??? max. 13 10 100 12 30 55 -40 to + 150 2.1 0.017 1.4 42
2 www.irf.com s d g used double sided cooling, mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part. r is measured at
static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 29 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 7.0 9.0 m ? ??? 8.0 11 v gs(th) gate threshold voltage 1.0 ??? 3.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.4 ??? mv/c i dss drain-to-source leakage current ??? ??? 30 a ??? ??? 100 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 28 ??? ??? s q g total gate charge ??? 16 24 q gs1 pre-vth gate-to-source charge ??? 4.6 ??? q gs2 post-vth gate-to-source charge ??? 1.4 ??? nc q gd gate-to-drain charge ??? 5.3 ??? q godr gate charge overdrive ??? 4.7 ??? see fig. 16 q sw switch char g e (q gs2 + q gd ) ??? 6.7 ??? q oss output charge ??? 11 ??? nc t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 12 ??? t d(off) turn-off delay time ??? 16 ??? ns t f fall time ??? 3.4 ??? c iss input capacitance ??? 2120 ??? c oss output capacitance ??? 440 ??? pf c rss reverse transfer capacitance ??? 260 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a e ar repetitive avalanche ener g y mj diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 13 (body diode) a i sm pulsed source current ??? ??? 100 (body diode) v sd diode forward voltage ??? 0.94 1.2 v t rr reverse recovery time ??? 31 47 ns q rr reverse recovery charge ??? 33 50 nc ??? v gs = 4.5v typ. ??? ??? i d = 8.8a v gs = 0v v ds = 15v i d = 8.8a 54 t j = 25c, i f = 8.8a di/dt = 100a/s t j = 25c, i s = 8.8a, v gs = 0v showing the integral reverse p-n junction diode. 8.8 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 13a max. v gs = 4.5v, i d = 10a v ds = v gs , i d = 250a v ds = 24v, v gs = 0v mosfet symbol clamped inductive load v ds = 15v, i d = 8.8a conditions 0.21 ? = 1.0mhz v ds = 15v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = 24v, v gs = 0v, t j = 125c v ds = 15v v gs = 12v v gs = -12v repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.38mh r g = 25 ? , i as = 8.8a. pulse width 400s; duty cycle 2%. surface mounted on 1 in. square cu board.
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 12a v gs = 10v 0.1 1.0 10.0 100.0 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 30s pulse width tj = 25c 2.7v vgs top 10v 7.0v 4.5v 3.8v 3.5v 3.2v 2.9v bottom 2.7v 0.1 1.0 10.0 100.0 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 30s pulse width tj = 150c 2.7v vgs top 10v 7.0v 4.5v 3.8v 3.5v 3.2v 2.9v bottom 2.7v 2.5 2.8 3.0 3.3 3.5 v gs , gate-to-source voltage (v) 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 20v 30s pulse width t j = 25c t j = 150c 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 010203040 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v vds= 15v i d = 8.8a
4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. threshold voltage vs. temperature fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 t j , junction temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 2.023 0.000678 19.48 0.240237 21.78 2.0167 14.71 58
www.irf.com 5 fig 13c. maximum avalanche energy vs. drain current fig 14a. switching time test circuit fig 14b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 13b. unclamped inductive waveforms fig 13a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15. gate charge test circuit fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.3a 3.8a bottom 8.8a 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0.005 0.010 0.015 0.020 0.025 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 12a
6 www.irf.com fig 17.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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directfet substrate and pcb layout, st outline (small size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs.

www.irf.com 7 directfet part marking directfet outline dimension, st outline (small size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. note: controlling dimensions are in mm max 0.191 0.156 0.112 0.018 0.024 0.024 0.031 0.022 0.012 0.039 0.090 0.028 0.003 0.007 min 0.187 0.146 0.108 0.014 0.023 0.023 0.030 0.021 0.010 0.035 0.086 0.023 0.001 0.003 max 4.85 3.95 2.85 0.45 0.62 0.62 0.79 0.57 0.30 0.98 2.28 0.70 0.08 0.17 min 4.75 3.70 2.75 0.35 0.58 0.58 0.75 0.53 0.26 o.88 2.18 0.59 0.03 0.08 code a b c d e f g h j k l m n p dimensions metric imperial
8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/04 directfet tape & reel dimension (showing component orientation). metric min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 imperial standard option (qty 4800) note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6618). for 1000 parts on 7" reel, order irf6618tr1 metric imperial tr1 option (qty 1000) min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions note: controlling dimensions in mm code a b c d e f g h max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 dimensions metric imperial loaded tape feed direction
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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